The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE

被引：3
作者：
Yildiz, A. [1 ]
Kasap, M. [2 ]
机构：
[1] Ahi Evran Univ, Fac Sci & Arts, Dept Phys, TR-40040 Kirsehir, Turkey
[2] Gazi Univ, Fac Sci & Arts, Dept Phys, TR-06500 Ankara, Turkey
来源：
LOW TEMPERATURE PHYSICS | 2010年 / 36卷 / 04期
关键词：
ELECTRON; MAGNETORESISTANCE; HETEROJUNCTION; MOBILITY; SYSTEMS; METALS;
D O I：
10.1063/1.3416681
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metal-insulator transition. The weak localization effect and a two-band model were used to analyze the magnetoconductivity data. The temperature dependence of the inelastic scattering time was extracted from the magnetoconductivity data at low temperatures. It was found that the inelastic scattering time is proportional to T(-1.63), suggesting that electron-electron interactions are dominant. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3416681]
引用
收藏
页码：320 / 324
页数：5
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