The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE

被引：3
作者：
Yildiz, A. [1 ]
Kasap, M. [2 ]
机构：
[1] Ahi Evran Univ, Fac Sci & Arts, Dept Phys, TR-40040 Kirsehir, Turkey
[2] Gazi Univ, Fac Sci & Arts, Dept Phys, TR-06500 Ankara, Turkey
来源：
LOW TEMPERATURE PHYSICS | 2010年 / 36卷 / 04期
关键词：
ELECTRON; MAGNETORESISTANCE; HETEROJUNCTION; MOBILITY; SYSTEMS; METALS;
D O I：
10.1063/1.3416681
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metal-insulator transition. The weak localization effect and a two-band model were used to analyze the magnetoconductivity data. The temperature dependence of the inelastic scattering time was extracted from the magnetoconductivity data at low temperatures. It was found that the inelastic scattering time is proportional to T(-1.63), suggesting that electron-electron interactions are dominant. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3416681]
引用
收藏
页码：320 / 324
页数：5
相关论文
共 32 条
  • [1] Temperature dependence of the Ge(111) surface electronic structure probed by inelastic H atom scattering
    Krueger, Kerstin
    Hertl, Nils
    Wodtke, Alec M.
    Buenermann, Oliver
    PHYSICAL REVIEW MATERIALS, 2024, 8 (03)
  • [2] Angular dependence of resonant inelastic x-ray scattering: a spherical tensor expansion
    Juhin, Amelie
    Brouder, Christian
    de Groot, Frank
    CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2014, 12 (05): : 323 - 340
  • [3] Inelastic Coulomb scattering rate within the finite-temperature Hubbard approximation
    Vazifehshenas, T.
    Salavati-fard, T.
    PHYSICA SCRIPTA, 2010, 81 (02)
  • [4] Phonon Scattering Effects on Temperature Dependence of Conductivity in Strained Silicon
    Matsuda K.
    Journal of Computational Electronics, 2002, 1 (3) : 425 - 429
  • [5] AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature
    Zhang, Lu
    Wang, Xiaoliang
    Xiao, Hongling
    Chen, Hong
    Feng, Chun
    Shen, Guangdi
    Wang, Zhanguo
    Hou, Xun
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 62 (02) : 10202 - p1
  • [6] Positive magnetoconductivity and inelastic scattering time at low temperatures with magnetic field in InSb semiconductor
    El Oujdi, A.
    Ennajih, D.
    El Kaaouachi, A.
    Mounir, E.
    Echchelh, A.
    Dlimi, S.
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2022, 737 (01) : 123 - 131
  • [7] Doping dependence of scattering rate for linear-in-temperature resistivity in cuprate superconductors
    Qin, Mingyang
    Zhang, Ruozhou
    Miao, Chaoran
    Wei, Zhongxu
    Shi, Yujun
    Yao, Yixuan
    Wang, Haowen
    Li, Yangmu
    Jin, Kui
    Xiang, Xiaodong
    PHYSICAL REVIEW RESEARCH, 2024, 6 (02):
  • [8] Temperature dependence of effective fluctuation time scales in spin glasses
    Kenning, G. G.
    Bowen, J.
    Sibani, P.
    Rodriguez, G. F.
    PHYSICAL REVIEW B, 2010, 81 (01):
  • [9] Temperature dependence of the establishment time of the vacancy equilibrium in simple crystals
    Tovbin, Yu. K.
    Komarov, V. N.
    PHYSICS OF THE SOLID STATE, 2014, 56 (02) : 341 - 346
  • [10] Crystal-field states of UO2 probed by directional dependence of nonresonant inelastic x-ray scattering
    Sundermann, M.
    van der Laan, G.
    Severing, A.
    Simonelli, L.
    Lander, G. H.
    Haverkort, M. W.
    Caciuffo, R.
    PHYSICAL REVIEW B, 2018, 98 (20)
1234