Hydrogen sorption hysteresis and superior storage capacity of silicon-carbide nanotubes over their carbon counterparts

被引:39
作者
Barghi, Seyed Hamed [1 ]
Tsotsis, Theodore T. [1 ]
Sahimi, Muhammad [1 ]
机构
[1] Univ So Calif, Mork Family Dept Chem Engn & Mat Sci, Los Angeles, CA 90089 USA
关键词
Hydrogen storage; SiC nanotubes; Sorption; Carbon nanotubes; BETA-SIC NANORODS; MOLECULAR-MODEL; ADSORPTION; SIMULATION; SPILLOVER; GROWTH;
D O I
10.1016/j.ijhydene.2014.10.087
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report for the first time the results of an extensive experimental study of hydrogen sorption in silicon-carbide nanotubes (SiCNTs), which were synthesized using the reaction between SiO vapor and carbon nanotubes (CNTs) in an argon atmosphere in the temperature range 1200 degrees C-1500 degrees C. The as-synthesized SiCNTs were then purified using a sodium hydroxide solution in order to remove the side products of the synthesis reaction. The hydrogen sorption characteristics of the as-synthesized SiCNTs, as well as those of the purified SiCNTs were then measured at 25 degrees C and for pressures of up to 100 bars. The results reveal hysteresis between the adsorption and desorption isotherms, which we attribute to the presence of metal impurities and/or the multilayer structure of the nanotubes. The hydrogen storage capacity of the as-synthesized SiCNTs is similar to that of the CNTs, whereas for the purified SiCNTs it is 50% higher than that of the CNTs, in agreement with the results of molecular simulations reported previously. In addition, the hydrogen uptake rate in the SiCNTs is about five times faster than that in the CNTs and, in contrast with the CNTs, its desorption from SiCNTs is completely reversible under vacuum. Copyright (c) 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:21107 / 21115
页数:9
相关论文
共 50 条
  • [41] Synthesis of silicon carbide nanotubes
    Taguchi, T
    Igawa, N
    Yamamoto, H
    Jitsukawa, S
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2005, 88 (02) : 459 - 461
  • [42] Growth of SiC nanorods prepared by carbon nanotubes-confined reaction
    Tang, CC
    Fan, SS
    Dang, HY
    Zhao, JH
    Zhang, C
    Li, P
    Gu, Q
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 210 (04) : 595 - 599
  • [43] Hydrogen sorption properties of arc generated single-wall carbon nanotubes
    Tarasov, BP
    Maelen, JP
    Lototsky, MV
    Muradyan, VE
    Yartys, VA
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2003, 356 : 510 - 514
  • [44] Hydrogen storage in Ni-B nanoalloy-doped 2D graphene
    Wang, Yi
    Liu, Jiehua
    Wang, Kean
    Chen, Tao
    Tan, Xin
    Li, Chang Ming
    [J]. INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2011, 36 (20) : 12950 - 12954
  • [45] Reticular synthesis and the design of new materials
    Yaghi, OM
    O'Keeffe, M
    Ockwig, NW
    Chae, HK
    Eddaoudi, M
    Kim, J
    [J]. NATURE, 2003, 423 (6941) : 705 - 714
  • [46] Adsorption of spillover hydrogen atoms on single-wall carbon nanotubes
    Yang, FH
    Lachawiec, AJ
    Yang, RT
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (12) : 6236 - 6244
  • [47] Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties
    Yang, TH
    Chen, CH
    Chatterjee, A
    Li, HY
    Lo, JT
    Wu, CT
    Chen, KH
    Chen, LC
    [J]. CHEMICAL PHYSICS LETTERS, 2003, 379 (1-2) : 155 - 161
  • [48] High surface area silicon carbide whiskers and nanotubes nanocast using mesoporous silica
    Yang, ZX
    Xia, YD
    Mokaya, R
    [J]. CHEMISTRY OF MATERIALS, 2004, 16 (20) : 3877 - 3884
  • [49] Synthesis and characterization of nanowires and nanocables
    Zhang, LD
    Meng, GW
    Phillipp, F
    [J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2000, 286 (01): : 34 - 38
  • [50] β-SiC nanorods synthesized by hot filament chemical vapor deposition
    Zhou, XT
    Wang, N
    Lai, HL
    Peng, HY
    Bello, I
    Wong, NB
    Lee, CS
    Lee, ST
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (26) : 3942 - 3944