Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates

被引：4

作者：

Cardinael, P. ^{[1
]}

Yadav, S. ^{[2
]}

Zhao, M. ^{[2
]}

Rack, M. ^{[1
]}

Lederer, D. ^{[1
]}

Collaert, N. ^{[2
]}

Parvais, B. ^{[1
,3
]}

Raskin, J-P ^{[1
]}

机构：

[1] UCLouvain, ICTEAM, Louvain La Neuve, Belgium

[2] IMEC, Leuven, Belgium

[3] VUB, Brussels, Belgium

来源：

IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021) | 2021年

关键词：

GaN-on-Si HEMTs; RF losses; effective substrate resistivity; harmonic distortion; C-doped III-Ns;

D O I：

10.1109/ESSDERC53440.2021.9631822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reduction of substrate RF losses and nonlinearities is key to enable high-performance GaN-on-Si HEMT based RF front-end modules. In this paper, the impact of the epitaxial III-N buffer layers on substrate RF losses and harmonic distortion is studied experimentally using coplanar waveguide (CPW) structures. In contrast to a SiO2/Si stack, a strong hysteresis in the RF losses (quantified using effective resistivity rho(eff)) of the HEMT stack is observed when the chuck DC bias is swept. A comparative analysis of various material stacks suggests that the hysteresis originates from the large time constants (much larger than 1 s) associated with the traps in the III-N layers. Harmonic distortion, on the other hand, shows much weaker hysteresis effect than rho(eff )during chuck bias sweeps.

引用

页码：303 / 306

页数：4

共 17 条

[1]

Allibert F, 2020, MICROWAVE J, V63, P72

[2] The influence of AlN nucleation layer on RF transmission loss of GaN buffer on high resistivity Si (111) substrate [J].