High performance near infrared photodetector based on cubic crystal structure SnS thin film on a glass substrate

被引：53

作者：

Mandi, Mohamed S. ^{[1
,2
]}

Ibrahim, K. ^{[1
]}

Hmood, A. ^{[3
]}

Ahmed, Naser M. ^{[1
]}

Mustafa, Falah I. ^{[2
]}

Azzez, Shrook A. ^{[1
,2
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, George Town, Malaysia

[2] Minist Sci & Technol, Renewable Energy Directorate, Baghdad, Iraq

[3] Univ Basrah, Coll Sci, Basrah, Iraq

来源：

MATERIALS LETTERS | 2017年 / 200卷

关键词：

Near infrared; Non-toxic; Photodetector; Sensitivity; Crystal structure; Semiconductors; OPTICAL-PROPERTIES; PHASE;

D O I：

10.1016/j.matlet.2017.04.077

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study involves a novel fabrication of high sensitivity, fast response, non-toxic and low-cost near infrared (NIR) photodetector based on cubic crystal structure SnS nanoflakes on a glass substrate using chemical bath deposition. The photodetector exhibited good photoresponse characteristics under NIR (750 nm) light illumination from the light emitting diode, including the sensitivity (698), rise time (0.44 s) and decay time (0.5 s) at bias voltage 5 V. Moreover, the photodetector showed excellent reproducibility and stability characteristics with time. The photoresponse properties also were studied at different bias voltages and illumination light intensities. Based on the above mentioned results, in addition to its low-cost, and non-toxic nature, the SnS photodetector is a promising optoelectronic device that is effectively applicable Over NIR range. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：10 / 13

页数：4

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