Growth of MN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

被引：6

作者：

Nepal, N. ^{[1
]}

Goswami, R. ^{[1
]}

Qadri, S. B. ^{[1
]}

Mahadik, N. A. ^{[1
]}

Kub, F. J. ^{[1
]}

Eddy, C. R., Jr. ^{[1
]}

机构：

[1] US Naval Res Lab, Washington, DC 20375 USA

来源：

SCRIPTA MATERIALIA | 2014年 / 93卷

关键词：

Atomic layer epitaxy; AlN/Pt heterostructures; Microelectromechanical systems; Low temperature; THIN-FILMS; ALN; BULK;

D O I：

10.1016/j.scriptamat.2014.08.027

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recent results on atomic layer epitaxy (ALE) growth and characterization of (0001)AlN on highly oriented (111)Pt layers on amorphous HfO2/Si(100) are reported. HfO2 was deposited by atomic layer deposition on Si(100) followed by ALE growth of Pt(15 nm) and, subsequently, AlN(60 nm) at 500 degrees C. Based on the X-ray diffraction and transmission electron microscopy measurements, the Pt and AlN layers are highly oriented along the (111) and (0002) directions, respectively. Demonstrations of AlN/Pt heterostructures open up the possibility of new state-of-the-art microelectromechanical systems devices. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：44 / 47

页数：4

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