Manipulation of the Magnetoresistance by Strain in Topological TaSe3

被引：2

作者：

Xing, Jie ^{[1
]}

Blawat, Joanna ^{[1
,2
]}

Speer, Smita ^{[2
]}

Saleheen, Ahmad Ikhwan Us ^{[1
]}

Singleton, John ^{[3
]}

Jin, Rongying ^{[1
,2
]}

机构：

[1] Univ South Carolina, Ctr Expt Nanoscale Phys, Dept Phys & Astron, Columbia, SC 29208 USA

[2] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA

[3] Los Alamos Natl Lab, Natl High Magnet Field Lab, Los Alamos, NM 87545 USA

来源：

ADVANCED QUANTUM TECHNOLOGIES | 2022年 / 5卷 / 12期

基金：

美国国家科学基金会;

关键词：

magnetoresistance; quantum oscillations; strain effect; SUPERCONDUCTIVITY;

D O I：

10.1002/qute.202200094

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

1D TaSe3 exhibits many unusual physical properties due to its distorted type-II chains. Ribbon-shaped single crystals can be easily bended along the b-axis, forming rings. This study investigates the magnetoresistance (MR) of TaSe3 up to 60 T in both unbended (ribbon shape) and ring-shaped (bended ribbon) samples. Notable changes are found in the magnetotransport properties between the two different shaped samples. One is that the MR in ring-shaped samples is three orders lower than that in unbended samples under the same sample environment. In addition, linear MR is observed above approximate to 20 T in ring-shaped samples when the magnetic field is parallel or perpendicular to the rings. Quantum oscillations are also observed as a function of the magnetic field when the magnetic field is applied parallel to rings, possibly due to the Altshuler-Aronov-Spivak effect or the inversion of the lowest Landau level beyond the quantum limit. All these results are related to strain-induced electronic structure change in TaSe3, an effective way to tune physical properties in low-dimensional materials.

引用

页数：5

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