Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices

被引：8

作者：

Shirazi-HD, M. ^{[1
,2
]}

Turkmeneli, K. ^{[3
]}

Liu, S. ^{[1
]}

Dai, S. ^{[3
]}

Edmunds, C. ^{[3
]}

Shao, J. ^{[2
,3
]}

Gardner, G. ^{[2
,4
]}

Zakharov, D. N. ^{[5
]}

Manfra, M. J. ^{[1
,2
,3
,4
]}

Malis, O. ^{[3
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Purdue Univ, Dept Phys & Astron, W Lafayette, IN 47907 USA

[4] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA

[5] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 12期

基金：

美国国家科学基金会;

关键词：

Crystal qualities - Growth conditions - Interface roughness - Intersubband absorption - Intersubband transitions - Near-infrared absorption - Structural characterization - Substrate temperature;

D O I：

10.1063/1.4944847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report substantial improvement of near-infrared (2-2.6 mu m) intersubband absorption in c-plane AlInN/GaN superlattices grown by molecular beam epitaxy. Progress was obtained through optimization of AlInN growth conditions using an AlInN growth rate of 0.9-nm/min at substrate temperature of 550 degrees C, as well as by judiciously placing the charge into two delta-doping sheets. Structural characterization suggests that AlInN crystal quality is enhanced and interface roughness is reduced. Importantly, near-infrared absorption data indicate that the optical quality of the AlInN/GaN superlattices is now comparable with that of AlN/GaN superlattices designed to exploit near-infrared intersubband transitions. (C) 2016 AIP Publishing LLC.

引用

页数：5

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