Surface reactions of monoethylgermane on Si(100)-(2x1)

被引：0
作者：
Keeling, LA [1 ]
Chen, L [1 ]
Greenlief, CM [1 ]
机构：
[1] Univ Missouri, Dept Chem, Columbia, MO 65211 USA
来源：
SURFACE SCIENCE | 1998年 / 400卷 / 1-3期
基金：
美国国家科学基金会;
关键词：
chemical vapor deposition; ethylgermane; photoelectron spectroscopy; silicon; surface decomposition reactions; thermal desorption spectroscopy;
D O I：
10.1016/S0039-6028(97)00835-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The adsorption and decomposition of monoethylgermane (GeH3Et) on the Si(100)-(2 x 1) surface was investigated with the intent of elucidating the surface processes leading to the deposition of germanium. The low-temperature adsorption of the molecule was explored, as well as its thermal decomposition. H-2 and C2H4 are observed as the desorption products in temperature-programmed desorption experiments. The ethylene is produced bq a hydride elimination reaction within the adsorbed ethyl groups. The amount of Ge which can be deposited in a reaction cycle is correlated with the number of sires occupied by the ethyl groups upon the dissociation of GeH3Et. (C) 1998 Elsevier Science B.V.
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页码：1 / 10
页数：10
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