Characterization of SOI wafers by synchrotron X-ray topography

被引：4

作者：

Shimura, T

Fukuda, K

Yasutake, K

Umano, M

机构：

[1] Osaka Univ, Dept Mat & Life Sci, Suita, Osaka 5650871, Japan

[2] Osaka Univ, Dept Precis Sci & Engn, Suita, Osaka 5650871, Japan

[3] Fukui Univ Technol, Dept Management Sci, Fukui 9108585, Japan

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2004年 / 27卷 / 1-3期

关键词：

D O I：

10.1051/epjap:2004067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Synchrotron X-ray topographs were taken for bonded silicon-on-insulator wafers. Under the grazing incident condition, the topographs of the top Si layer and the substrate are similar, which represent the variation in incident angle due to surface undulation. Furthermore, a circular concentric pattern was observed in the topographs of the top Si layer both at the grazing and higher incident angles. This shows that the concentric pattern is not due to surface undulation, but due to lattice distortion.

引用

收藏

页码：439 / 442

页数：4

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