(Ba,Sr)TiO3 thin films:: Preparation, properties and reliability

被引：0
作者：
Tseng, TY [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
来源：
FERROELECTRICS | 1999年 / 232卷 / 1-4期
关键词：
BST; thin films; properties; reliability;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
(Ba,Sr)TiO3 thin films are important capacitor materials for future gigabit era dynamic random access memory (DRAM) applications. This article reviews the technological aspects of BST films, including thin films deposition techniques, post annealing, physical, electrical and dielectric characteristics of the films, effects of bottom electrode materials, complex plane analysis of AC electrical, dielectric relaxation, and defect and reliability phenomena associated with the films. In addition, possible future developments are briefly summarized.
引用
收藏
页码：881 / 893
页数：13
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