Selective removal of 10-40-nm particles from silicon wafers using laser-induced plasma shockwaves

Current and projected nanoparticle cleaning requirements, especially in semiconductor and nano-manufacturing, necessitate a technique that is not only capable of removing sub-100 nm particles, but also is damage-free and able to perform localized (selective) area cleaning of a relatively small number of particles. A particle cleaning technique based on laser-induced plasma (LIP) shockwaves has been considered and investigated in recent years as a prospective approach. In the current study, the removal of polystyrene latex (PSL) nanoparticles in the diameter range of 10-40 nm from silicon substrates is demonstrated using shockwaves generated by the expansion of LIP for the first time. The effectiveness and practical uses of the LIP technique in the sub-100-nm range are also discussed.