Infrared analysis on hydrogen content and Si-H bonding configurations of hydrogenated amorphous silicon films

被引：10

作者：

Luo, Z ^{[1
]}

Lin, XY ^{[1
]}

Lin, SH ^{[1
]}

Yu, CY ^{[1
]}

Lin, KX ^{[1
]}

Yu, YP ^{[1
]}

Tan, WF ^{[1
]}

机构：

[1] Shantou Univ, Dept Phys, Shantou 515063, Peoples R China

来源：

ACTA PHYSICA SINICA | 2003年 / 52卷 / 01期

关键词：

hydrogenated amorphous silicon film; FTIR spectral; hydrogen content; silicon-hydrogen bonding configuration;

D O I：

10.7498/aps.52.169

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Fourier transform infrared ( FTIR) spectrum is an effective technology for studying the hydrogen content ( C-H) and the silicon-hydrogen bonding configuration (Si-H-n) of hydrogenated amorphous silicon (a-Si:H) films. In this paper, C-H and Si-H-n of a-Si:H films, fabricated at different substrate temperatures (T-s) by plasma enhanced chemical vapor deposition method, have been obtained by analyzing their FTIR spectra that are treated by baseline fitting and Gaussian function fitting. The effects of T-s on C-H and Si-H-n are studied.

引用

页码：169 / 174

页数：6

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