Excimer laser crystallized poly-Si TFTs and their applications

被引：0

作者：

Gosain, DP ^{[1
]}

Noguchi, T ^{[1
]}

Machida, A ^{[1
]}

Usui, S ^{[1
]}

机构：

[1] Sony Corp, Frontier Sci Labs, Hodogaya Ku, Yokohama, Kanagawa 2400036, Japan

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The advantages and disadvantages of various films (PECVD, PVD, etc.) deposited at low temperature and subjected to pulsed laser crystallization is discussed. The processes taking place during laser crystallization are discussed. Laser crystallization of a-Si films deposited at 110 degrees C on plastic is reported. A doping technique suitable for low temperature and large-area substrates is reported. The characteristics of bottom-gate and self-aligned top-gate poly-Si TFTs fabricated at a plastic-compatible substrate temperature of 110 degrees C using our newly developed process ape reported. It is demonstrated that post annealing of TFTs using an excimer laser is feasible. TFTs with a mobility in excess of 140 cm(2)/V.s are reported.

引用

页码：1313 / 1320

页数：8

共 21 条

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