Low-drive-voltage MQW electroabsorption modulator for optical short-pulse generation

被引：22

作者：

Oshiba, S ^{[1
]}

Nakamura, K ^{[1
]}

Horikawa, H ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, Semicond Technol Lab, Tokyo 193, Japan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 02期

关键词：

optical pulse generation; optical switches; quantum-confined Stark effect; quantum-well devices; time-division multiplexing;

D O I：

10.1109/3.658708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on InGaAsP-InGaAsP tensile strained MQW electroabsorption (EA) modulators with a high modulation efficiency of 35 GHz/V that generate optical short pulses. We studied and optimized the multiple-quantum-well (MQW) structural parameters, barrier height, and well number, thickness, and strain in the absorption layer to ensure high attenuation efficiency and generate low duty cycle pulses. Low TE/TM polarization sensitivity was obtained by controlling strain, Stable, nearly transform-limited optical pulse trains with a narrow pulsewidth of 3.6 ps are generated by applying a 20-GHz sinusoidal modulation voltage (6 V-pp) to the EA modulator. This achieves a very small pulse duty cycle of 7.2%.

引用

页码：277 / 281

页数：5

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