Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device

被引：32
作者：
Wei, L. J. [1 ,2 ]
Yuan, Y. [1 ,2 ]
Wang, J. [1 ,2 ]
Tu, H. Q. [1 ,2 ,3 ]
Gao, Y. [1 ,2 ]
You, B. [1 ,2 ,4 ]
Du, J. [1 ,2 ,4 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Inst Technol, Dept Math & Phys, Nanjing 211167, Jiangsu, Peoples R China
[4] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2017年 / 19卷 / 19期
关键词：
MEMORY; BATIO3; NANOWIRES; FILMS;
D O I：
10.1039/c7cp01461a
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment. We suggest that the bipolar resistive switching is dominated by the trapping/ detrapping of electrons at the BaTiO3-Cu interface. In addition, we demonstrate that the device exhibits good performance, including a large on/off ratio, high reliability and long retention time. Therefore, BaTiO3 may become a good candidate for application in resistive switching random access memory (RRAM) devices.
引用
收藏
页码：11864 / 11868
页数：5
相关论文
共 51 条
  • [1] Large-signal microwave performance of GaN-based NDR diode oscillators
    Alekseev, E
    Pavlidis, D
    [J]. SOLID-STATE ELECTRONICS, 2000, 44 (06) : 941 - 947
  • [2] Oxide stoichiometry-controlled TaOx-based resistive switching behaviors
    Baek, Gwang Ho
    Lee, Ah Rahm
    Kim, Tae Yoon
    Im, Hyun Sik
    Hong, Jin Pyo
    [J]. APPLIED PHYSICS LETTERS, 2016, 109 (14)
  • [3] Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices
    Baeumer, C.
    Raab, N.
    Menke, T.
    Schmitz, C.
    Rosezin, R.
    Mueller, P.
    Andre, M.
    Feyer, V.
    Bruchhaus, R.
    Gunkel, F.
    Schneider, C. M.
    Waser, R.
    Dittmann, R.
    [J]. NANOSCALE, 2016, 8 (29) : 13967 - 13975
  • [4] Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures
    Bhattacharyya, S
    Henley, SJ
    Mendoza, E
    Gomez-Rojas, L
    Allam, J
    Silva, SRP
    [J]. NATURE MATERIALS, 2006, 5 (01) : 19 - 22
  • [5] OSCILLATIONS UP TO 712 GHZ IN INAS/ALSB RESONANT-TUNNELING DIODES
    BROWN, ER
    SODERSTROM, JR
    PARKER, CD
    MAHONEY, LJ
    MOLVAR, KM
    MCGILL, TC
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (20) : 2291 - 2293
  • [6] Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO
    Chen, Guang
    Song, Cheng
    Chen, Chao
    Gao, Shuang
    Zeng, Fei
    Pan, Feng
    [J]. ADVANCED MATERIALS, 2012, 24 (26) : 3515 - 3520
  • [7] Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
    Chen, KJ
    Niu, GF
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (02) : 312 - 318
  • [8] The influence of an extrinsic interfacial layer on the polarization of sputtered BaTiO3 film -: art. no. 202905
    Cho, YW
    Choi, SK
    Rao, GV
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (20) : 1 - 3
  • [9] Growth and self-assembly of BaTiO3 nanocubes for resistive switching memory cells
    Chu, Dewei
    Lin, Xi
    Younis, Adnan
    Li, Chang Ming
    Dang, Feng
    Li, Sean
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 2014, 214 : 38 - 41
  • [10] Confining grains of textured Cu2O films to single-crystal nanowires and resultant change in resistive switching characteristics
    Deng, Xiao Long
    Hong, Sahwan
    Hwang, Inrok
    Kim, Jin-Soo
    Jeon, Ji Hoon
    Park, Yun Chang
    Lee, Jongjin
    Kang, Sung-Oong
    Kawai, Tomoji
    Park, Bae Ho
    [J]. NANOSCALE, 2012, 4 (06) : 2029 - 2033
123456