Properties of Silicon Carbide Schottky Diodes Under Self-heating Influence

被引：0

作者：

Zarebski, J. ^{[1
]}

Dabrowski, J. ^{[1
]}

机构：

[1] Gdynia Maritime Univ, Dept Marine Elect, PL-81225 Gdynia, Poland

来源：

2009 EUROPEAN CONFERENCE ON CIRCUIT THEORY AND DESIGN, VOLS 1 AND 2 | 2009年

关键词：

Schottky diode; silicon carbide; modelling; self-heating; SPICE; SPICE;

D O I：

10.1109/ECCTD.2009.5274939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper deals with modelling non-isothermal characteristics of SiC power Schottky diodes. In the paper the d.c. electrothermal model of the investigated devices included the self-heating phenomenon was presented and experimentally verified. The model was formulated for SPICE. The evaluation of the accuracy of the elaborated model has been performed by comparison of calculated and measured d.c. characteristics of a commercial available SiC power Schottky diode.

引用

页码：253 / 256

页数：4

共 10 条

[1] [Anonymous], 2003, PSPICE REFERENCE GUI, P146
[2] DABROWSKI J, 2007, THESIS TU LODZ POLAN
[3] GORECKI K, 2001, METROLOGY MEASUREMEN, V8, P379
[4] Shur M., 1996, Introduction to electronic devices
[5] Sze S. M., 1979, PHYS SEMICONDUCTOR D
[6] ZAREBSKI J, NONISOTHERMAL CHARAC, P1363
[7] ZAREBSKI J, 1996, MODELLING SIMULATION
[8] Zarebski J, 2006, INFORM MIDEM, V36, P123
[9] SPICE modelling of power Schottky diodes
Zarebski, Janusz
Dabrowski, Jacek
[J]. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2008, 21 (06) : 551 - 561
[10] Zverev I., 2001, EPE C P

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