Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices

被引：0

作者：

Dzyadukh, S. ^{[1
]}

Nesmelov, S. ^{[1
]}

Voitsekhovskii, A. ^{[1
]}

Gorn, D. ^{[1
]}

机构：

[1] Tomsk State Univ, Radiophys Fac, Nanoelect & Nanophoton Lab, Siberian Phys Tech Inst, 36 Lenina Av, Tomsk 634021, Russia

来源：

INTERNATIONAL CONFERENCE OF YOUNG SCIENTISTS AND SPECIALISTS OPTICS-2015 | 2016年 / 735卷

关键词：

D O I：

10.1088/1742-6596/735/1/012012

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The paper presents brief research results of the admittance of metal-insulator-semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/HgTe/HgCdTe quantum wells (QW) in the surface layer. The thickness of a quantum well was 5.6 nm, and the composition of barrier layers with the thickness of 35 nm was close to 0.65. Measurements were conducted in the range of temperatures from 8 to 200 K. It is shown that for structure with quantum well based on HgTe capacitance and conductance oscillations in the strong inversion are observed. Also it is assumed these oscillations are related with the recharging of quantum levels in HgTe.

引用

页数：5

共 4 条

[1] Comparison of normal and inverted band structure HgTe/CdTe superlattices for very long wavelength infrared detectors [J].