Micropower fully integrated CMOS readout interface for neural recording application

被引:7
作者
Li, Hongge [1 ]
Zhao, Wei [1 ]
Zhang, Youguang [1 ]
机构
[1] BeiHang Univ, Dept Elect, Sch Elect Informat Engn, Beijing 100191, Peoples R China
基金
中国国家自然科学基金;
关键词
NOISE; AMPLIFIER; TRANSISTORS;
D O I
10.1016/j.microrel.2009.09.013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we presented a micropower, small-size fully integrated CMOS readout interface for neural recording system. A crucial and important module of this system is the amplifier circuit with low-power low-noise. We describe a micropower low-noise readout circuit using an active feedback fully differential structure to reject the 1/f noise and large DC-offsets. the substrate-bias technology to further decrease the noise and power of the neural recording amplifier. Therefore, the neural amplifier with micropower low-noise and high input impedance is presented. The readout interface core, fully differential amplifier is implemented in 0.35-mu m CMOS process, passes neural signals from 10 Hz to 9 kHz with an input-referred noise of 4.3 mu V-rms. The power consumption of single amplifier is 5.6 mu W while consuming 0.03 mm(2) of die area. The low cutoff frequencies of the circuit can adjusted from 10 Hz to 400 Hz, and the high cutoff frequencies form 4 kHz to 9 kHz. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:273 / 281
页数:9
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