Structural characterization of indium oxide nanostructures: a Raman analysis

被引：159

作者：

Berengue, Olivia M. ^{[1
]}

Rodrigues, Ariano D. ^{[1
]}

Dalmaschio, Cleocir J. ^{[2
]}

Lanfredi, Alexandre J. C. ^{[3
]}

Leite, Edson R. ^{[2
]}

Chiquito, Adenilson J. ^{[1
]}

机构：

[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil

[2] Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP, Brazil

[3] Univ Fed ABC, Ctr Engn Modelagem & Ciencias Sociais Aplicadas, BR-09210170 Santo Andre, SP, Brazil

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 04期

基金：

巴西圣保罗研究基金会;

关键词：

CONFINEMENT; NANOWIRES;

D O I：

10.1088/0022-3727/43/4/045401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work we report on structural and Raman spectroscopy measurements of pure and Sn-doped In2O3 nanowires. Both samples were found to be cubic and high quality single crystals. Raman analysis was performed to obtain the phonon modes of the nanowires and to confirm the compositional and structural information given by structural characterization. Cubic-like phonon modes were detected in both samples and their distinct phase was evidenced by the presence of tin doping. As a consequence, disorder effects were detected evidenced by the break of the Raman selection rules.

引用

页数：4

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