Surface photovoltage spectroscopy of AlGaAs/GaAs heterojunction in the range above the bandgap of AlGaAs

被引：0

作者：

Kumar, S ^{[1
]}

Bhattacharya, P ^{[1
]}

Roy, UN ^{[1
]}

Chandvankar, S ^{[1
]}

Arora, BM ^{[1
]}

机构：

[1] Ctr Adv Technol, Laser Phys Div, Semicond Lab, Indore 452013, India

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surface photovoltage spectroscopy (SPS) has been used to study p-AlGaAs/n+-GaAs heterojunctions in die wavelength range 100-800nm. SPS results in the range 600-1000 nm have been reported earlier [1]. A dip in the magnitude of SPS and change in the phase by 180 degrees has been observed near 500nm. Results are explained by considering surface photovoltages at the front surface of AlGaAs and at the heterojunction of AlGaAs/GaAs due to the diffused minority carriers. Diffusion length of electrons in AlGaAs has been calculated using the SPS results.

引用

页码：251 / 254

页数：4

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