Systematic inclusion of defects in pure carbon single-wall nanotubes and their effect on the Raman D-band

被引：85

作者：

Dillon, AC ^{[1
]}

Parilla, PA ^{[1
]}

Alleman, JL ^{[1
]}

Gennett, T ^{[1
]}

Jones, KM ^{[1
]}

Heben, MJ ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

CHEMICAL PHYSICS LETTERS | 2005年 / 401卷 / 4-6期

关键词：

D O I：

10.1016/j.cplett.2004.11.104

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Raman D-band feature (similar to1350 cm(-1)) is examined with 2.54 eV excitation for pure bulk carbon single-wall nanotube samples before and after treatments that increase defect densities. Upon employing mass-transport-limited oxidation to introduce defects, the D-band intensity increases approximately linearly with reaction time. A relatively constant ratio of the D-band intensity and the major tangential G-band intensity (D/G) is observed for the purified samples examined at 2.54 and 1.96 eV suggesting a characteristic number of defects is introduced for given synthesis and purification processes. The D/G ratio is similar to1/190 and 1/40 for excitation at 2.54 and 1.96 eV, respectively. (C) 2004 Elsevier B.V. All rights reserved.

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页码：522 / 528

页数：7

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