2.5 W continuous wave output at 665 nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser

被引:19
作者
Mateo, Cherry May N. [1 ,3 ]
Brauch, Uwe [1 ,3 ]
Kahle, Hermann [2 ,3 ]
Schwarzbaeck, Thomas [2 ,3 ,4 ]
Jetter, Michael [2 ,3 ]
Ahmed, Marwan Abdou [1 ,3 ]
Michler, Peter [2 ,3 ]
Graf, Thomas [1 ,3 ]
机构
[1] Univ Stuttgart, Inst Strahlwerkzeuge IFSW, Pfaffenwaldring 43, D-70569 Stuttgart, Germany
[2] Univ Stuttgart, IHFG, Allmandring 3, D-70569 Stuttgart, Germany
[3] Univ Stuttgart, SCoPE Stuttgart Res Ctr Photon Engn, Pfaffenwaldring 9, D-70569 Stuttgart, Germany
[4] TRUMPF Lasersystems Semicond Mfg GmbH, Johann Maus Str 2, D-71254 Ditzingen, Germany
关键词
SEMICONDUCTOR DISK LASER; HIGH-POWER; VECSEL; BEAMS;
D O I
10.1364/OL.41.001245
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
An output power of 2.5 W at a wavelength of 665 nm was obtained from a quantum-well (QW) and multipass-pumped AlGaInP-based vertical-external-cavity surface-emitting laser operated at a heat sink temperature of 10 degrees C. Intracavity frequency doubling resulted in an output power of 820mW at a wavelength of 333 nm. To the best of our knowledge, these are the highest continuous wave output powers from this type of laser both at the fundamental wavelength and in frequency-doubled operation. In fundamental wavelength operation, further power scaling by increasing the pump-spot size increased the output power to 3.3 W. However, at this power level, the laser was highly unstable. When the laser was operated at 50% pump duty cycle, a reproducible and stable peak output power of 3.6W was obtained. These results demonstrate the potential of optical QW pumping combined with multipass pumping for the operation of AlGaInP-based semiconductor disk lasers. (C) 2016 Optical Society of America
引用
收藏
页码:1245 / 1248
页数:4
相关论文
共 19 条
  • [1] Comparison of AlGaInP-VECSEL gain structures
    Baumgaertner, Stefan
    Kahle, Hermann
    Bek, Roman
    Schwarzbaeck, Thomas
    Jetter, Michael
    Michler, Peter
    [J]. JOURNAL OF CRYSTAL GROWTH, 2015, 414 : 219 - 222
  • [2] PARAMETRIC INTERACTION OF FOCUSED GAUSSIAN LIGHT BEAMS
    BOYD, GD
    KLEINMAN, DA
    [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 3597 - +
  • [3] High-power semiconductor red laser arrays for use in photodynamic therapy
    Charamisinau, I
    Happawana, GS
    Evans, GA
    Kirk, JB
    Bour, DR
    Rosen, A
    Hsi, RA
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2005, 11 (04) : 881 - 891
  • [4] The Nuts and Bolts of Low-level Laser (Light) Therapy
    Chung, Hoon
    Dai, Tianhong
    Sharma, Sulbha K.
    Huang, Ying-Ying
    Carroll, James D.
    Hamblin, Michael R.
    [J]. ANNALS OF BIOMEDICAL ENGINEERING, 2012, 40 (02) : 516 - 533
  • [5] Hastie J., 2005, OPT EXPRESS, V13, P219
  • [6] Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser
    Hastie, Jennifer E.
    Morton, Lynne G.
    Kemp, Alan J.
    Dawson, Martin D.
    Krysa, Andrey B.
    Roberts, John S.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (06)
  • [7] Kahle H., 2015, 2015 C LAS EL EUR QU
  • [8] High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL
    Kahle, Hermann
    Bek, Roman
    Heldmaier, Matthias
    Schwarzbaeck, Thomas
    Jetter, Michael
    Michler, Peter
    [J]. APPLIED PHYSICS EXPRESS, 2014, 7 (09)
  • [9] 615 nm GaInNAs VECSEL with output power above 10 W
    Kantola, Emmi
    Leinonen, Tomi
    Penttinen, Jussi-Pekka
    Korpijarvi, Ville-Markus
    Guina, Mircea
    [J]. OPTICS EXPRESS, 2015, 23 (16): : 20280 - 20287
  • [10] High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams
    Kuznetsov, M
    Hakimi, F
    Sprague, R
    Mooradian, A
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (08) : 1063 - 1065