Study on the optical properties of β-Ga2O3 films grown by MOCVD

被引：63

作者：

Hu, Daqiang ^{[1
]}

Zhuang, Shiwei ^{[1
]}

Ma, Zhengzheng ^{[1
]}

Dong, Xin ^{[1
]}

Du, Guotong ^{[1
]}

Zhang, Baolin ^{[1
]}

Zhang, Yuantao ^{[1
]}

Yin, Jingzhi ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Qianjin St 2699, Changchun 130012, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 15期

基金：

中国国家自然科学基金;

关键词：

CHEMICAL-VAPOR-DEPOSITION; PULSED-LASER DEPOSITION; THIN-FILMS; EPITAXIAL FILM; GA2O3; FILMS; PHOTOLUMINESCENCE; DEVICE;

D O I：

10.1007/s10854-017-6882-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

beta-Ga2O3 films were grown on c-plane sapphire substrates at different substrate temperatures by metal-organic chemical vapor deposition. The effects of substrate temperature on transparence, optical band gap and photoluminescence of the films were studied systematically. With increasing the substrate temperature, the films structure was changed from amorphous to single orientation beta-Ga2O3. The beta-Ga2O3 films exhibited excellent optical transparency in the ultraviolet and visible regions. The ultraviolet-blue photoluminescence was observed at room temperature. The temperature-dependent photoluminescence was also carried out and the relative intensity of the blue emission with respect to the ultraviolet emission decreased with increasing the measured temperature. The origin of luminescence was discussed.

引用

页码：10997 / 11001

页数：5

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