Ripple formation on InP surface irradiated with femtosecond laser

被引：8
|
作者：
Qian, H. X. [1 ]
Zhou, W. [1 ]
Zheng, H. Y. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
来源：
INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 4, NO 4 | 2005年 / 4卷 / 04期
关键词：
femtosecond laser; InP; ripple; oxidation; Raman spectroscopy;
D O I：
10.1142/S0219581X0500370X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Single crystalline InP was ablated with linearly p-polarized femtosecond laser in air. Ripples with orientation parallel to the laser polarization direction were formed at low laser fluence. Analyses by EDX reveal In oxides and P oxides on the surface. Nficro Raman spectroscopy of the laser irradiated surface indicates presence of stresses and possible formation of InP nanocrystals due to the ferntosecond laser irradiation.
引用
收藏
页码：779 / 784
页数：6
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