Defect reduction in silicon nanoparticles by low-temperature vacuum annealing

被引：32

作者：

Niesar, S. ^{[1
]}

Stegner, A. R. ^{[1
]}

Pereira, R. N. ^{[2
,3
]}

Hoeb, M. ^{[1
]}

Wiggers, H. ^{[4
,5
]}

Brandt, M. S. ^{[1
]}

Stutzmann, M. ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal

[3] Univ Aveiro, I3N, P-3810193 Aveiro, Portugal

[4] Univ Duisburg Essen, Inst Verbrennung & Gasdynam, D-47048 Duisburg, Germany

[5] Univ Duisburg Essen, Ctr NanoIntegrat Duisburg Essen, CeNIDE, D-47048 Duisburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期

关键词：

annealing; elemental semiconductors; etching; nanoparticles; paramagnetic resonance; photoconductivity; photothermal spectroscopy; semiconductor thin films; silicon; silicon compounds; ELECTRON-SPIN-RESONANCE; SOLAR-CELLS; AMORPHOUS-SILICON; MICROWAVE REACTOR; NANOCRYSTALS; MECHANISM; SURFACES;

D O I：

10.1063/1.3428359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using electron paramagnetic resonance, we find that vacuum annealing at 200 degrees C leads to a significant reduction in the silicon dangling bond (Si-db) defect density in silicon nanoparticles (Si-NPs). The best improvement of the Si-db density by a factor of 10 is obtained when the vacuum annealing is combined with an etching step in hydrofluoric acid (HF), whereas HF etching alone only removes the Si-dbs at the Si/SiO(2) interface. The reduction in the Si-db defect density is confirmed by photothermal deflection spectroscopy and photoconductivity measurements on thin Si-NPs films. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428359]

引用

页数：3

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