Microstructural and morphological properties of spin-coated Cu2MnSn (S,Se)4 thin films for solar cell applications

被引：3

作者：

Chen, Leilei ^{[1
]}

Deng, Hongmei ^{[2
]}

Zhang, Qiao ^{[1
]}

Yu, Jiejin ^{[1
]}

Tao, Jiahua ^{[1
]}

Sun, Lin ^{[1
]}

Yang, Pingxiong ^{[1
]}

Chu, Junhao ^{[1
]}

机构：

[1] East China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

[2] Shanghai Univ, Lab Microstruct, 99 Shangda Rd, Shanghai 200444, Peoples R China

来源：

MATERIALS LETTERS | 2017年 / 206卷

基金：

中国国家自然科学基金;

关键词：

Cu2MnSn(S; Se)(4); Thin films; Sol-gel; Optical properties; Semiconductors; OPTICAL-PROPERTIES; SULFURIZATION; GROWTH;

D O I：

10.1016/j.matlet.2017.07.041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu2MnSn(S,Se)(4) (CMTSSe) thin films were fabricated by using spin-coating and following selenized for different temperature. Single-phase CMTSSe films have been formed in the temperature range of 500-540 degrees C. Both XRD patterns and Raman measurements reveal that the selenization temperature drives the films exhibited high crystallinity and strong preferred orientation in the (1 1 2) plane. The excessive elevated selenization temperature during the grain growth would lead to the decomposition of CMTSSe phase and severe Sn loss. Further morphological studies indicate an abrupt transition from a smooth and dense microstructure to a roughness structure with many voids. The band gap energy of the CMTSSe films varied from 1.43 to 1.52 eV relying on the element loss during selenization. The solar cell device with the CMTSSe layer selenized at 540 degrees C achieved the highest open circuit voltage of 444 mV. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：249 / 252

页数：4

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