Vacancy defects induced by low energy electron irradiation in 6H and 3C-SiC monocrystals characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance

被引：4

作者：

Kerbiriou, X.

Barthe, M. F.

Esnouf, S.

Desgardin, P.

Blondiaux, G.

Petite, G.

机构：

[1] CNRS, CERI, F-45071 Orleans, France

[2] Ecole Polytech, LSI, F-91128 Palaiseau, France

来源：

Silicon Carbide and Related Materials 2005, Pts 1 and 2 | 2006年 / 527-529卷

关键词：

positron annihilation; electron paramagnetic resonance; Doppler broadening; positron lifetime spectroscopy; vacancy defects;

D O I：

10.4028/www.scientific.net/MSF.527-529.571

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we used Positron Annihilation Spectroscopy (PAS) and Electron Paramagnetic Resonance (EPR) to investigate the properties of vacancy defects produced by low energy electron irradiation. N-doped 3C-SiC and 6H-SiC monocrystals have been irradiated with electrons at different energies from 240keV to 900keV. EPR measurements show that Frenkel pairs V-Si(3-)/Si are created in 6H-SiC when electron irradiation is performed at low energy (240-360 keV). EPR also indicates that the silicon displacement threshold energy is higher in 3C-SiC than in 6H-SiC. Moreover, PAS results show that the size and concentration of the vacancy defects decrease when the electron energy decreases for both polytypes. PAS detects vacancy defects in 240keV electron irradiated 3C-SiC, and the detection of the carbon vacancy is proposed.

引用

页码：571 / 574

页数：4

共 10 条

[1] Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures [J].

Barthe, MF ;

Henry, L ;

Corbel, C ;

Blondiaux, G ;

Saarinen, K ;

Hautojärvi, P ;

Hugonnard, E ;

Di Cioccio, L ;

Letertre, F ;

Ghyselen, B .

PHYSICAL REVIEW B, 2000, 62 (24) :16638-16644

[2] Positron studies of defects in ion-implanted SiC [J].

Brauer, G ;

Anwand, W ;

Coleman, PG ;

Knights, AP ;

Plazaola, F ;

Pacaud, Y ;

Skorupa, W ;

Stormer, J ;

Willutzki, P .

PHYSICAL REVIEW B, 1996, 54 (05) :3084-3092

[3] CARBON AND SILICON VACANCIES IN ELECTRON-IRRADIATED 6H-SIC [J].

DANNEFAER, S ;

CRAIGEN, D ;

KERR, D .

PHYSICAL REVIEW B, 1995, 51 (03) :1928-1930

[4] Slow positron beam facility in Orleans [J].

Desgardin, P ;

Liszkay, L ;

Barthe, MF ;

Henry, L ;

Briaud, J ;

Saillard, M ;

Lepolotec, L ;

Corbel, C ;

Blondiaux, G ;

Colder, A ;

Marie, P ;

Levalois, M .

POSITRON ANNIHILATION - ICPA-12, 2001, 363-3 :523-525

[5] Silicon vacancy-type defects in as-received and 12-MeV proton-irradiated 6H-SiC studied by positron annihilation spectroscopy -: art. no. 115210 [J].

Henry, L ;

Barthe, MF ;

Corbel, C ;

Desgardin, P ;

Blondiaux, G ;

Arpiainen, S ;

Liszkay, L .

PHYSICAL REVIEW B, 2003, 67 (11) :10

[6]

Itoh H, 1997, PHYS STATUS SOLIDI A, V162, P173, DOI 10.1002/1521-396X(199707)162:1<173::AID-PSSA173>3.0.CO

[7]

2-W

[8] Characterization of 3C-SiC monocrystals using positron annihilation spectroscopy [J].

Kerbiriou, X ;

Greddé, A ;

Barthe, MF ;

Desgardin, P ;

Blondiaux, G .

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 :825-828

[9] Transmission electron microscope radiation damage of 4H and 6H SiC studied by photoluminescence spectroscopy [J].

Steeds, JW ;

Evans, GA ;

Danks, LR ;

Furkert, S ;

Voegeli, W ;

Ismail, MM ;

Carosella, F .

[10] Intrinsic defects in 6H-SiC generated by electron irradiation at the silicon displacement threshold [J].

von Bardeleben, HJ ;

Cantin, JL ;

Baranov, P ;

Mokhov, EN .

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 :509-512

← 1 →