Au plasmon enhanced high performance β-Ga2O3 solar-blind photo-detector

被引:43
作者
An, Yuehua [1 ,2 ]
Chu, Xulong [1 ,2 ]
Huang, Yuanqi [1 ,2 ]
Zhi, Yusong [3 ]
Guo, Daoyou [1 ,2 ]
Li, Peigang [3 ]
Wu, Zhenping [1 ,2 ]
Tang, Weihua [1 ,2 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Sci, Lab Optoelect Mat & Devices, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[3] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Zhejiang, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Au/Ga2O3; Surface plasmon polariton; Enhance; Solar-blind photodetector; OPTICAL-PROPERTIES;
D O I
10.1016/j.pnsc.2016.01.008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Surface plasmon polariton (SPP) is electro-magnetic wave coupled to free electron oscillations near the surface of metal, and has been used to improve the photoelectric properties in many optoelectronic devices. In the present study, the Au nanoparticles (NPs)/beta-Ga2O3 composite thin film was fabricated through depositing Au ultra -thin film on the /3-Ga203 thin film followed by post -thermal treatment. Compared to bare beta-Ga2O3 thin film, a significant absorption around 510 nm, which is attributed to SPP of Au NPs, was observed in the UV vis spectrum of Au NPs/beta-Ga2O3 composite thin film. The results showed that the photoresponse of Au NPs/beta-Ga2O3 photodetector illuminated under 254 nm + 532 nm light was much higher than that illuminated under 254 nm light, indicating an enhancement of photoelectric property for the solar -blind photodetector based on beta-Ga2O3 thin film. (C) 2016 The Authors. Production and hosting by Elsevier B.V. on behalf of Chinese Materials Research Society. This is an open access article under the CC BY -NC -ND license (littp://creativecornmons.org/licenses/by-ne-nd/4.0/).
引用
收藏
页码:65 / 68
页数:4
相关论文
共 15 条
[1]   Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy -: art. no. 241108 [J].
Alivov, YI ;
Özgür, Ü ;
Dogan, S ;
Johnstone, D ;
Avrutin, V ;
Onojima, N ;
Liu, C ;
Xie, J ;
Fan, Q ;
Morkoç, H .
APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3
[2]   Individual β-Ga2O3 nanowires as solar-blind photodetectors [J].
Feng, P ;
Zhang, JY ;
Li, QH ;
Wang, TH .
APPLIED PHYSICS LETTERS, 2006, 88 (15)
[3]   Semiconductor near-ultraviolet photoelectronics [J].
Goldberg, YA .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (07) :R41-R60
[4]   Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors [J].
Guo, D. Y. ;
Wu, Z. P. ;
An, Y. H. ;
Guo, X. C. ;
Chu, X. L. ;
Sun, C. L. ;
Li, L. H. ;
Li, P. G. ;
Tang, W. H. .
APPLIED PHYSICS LETTERS, 2014, 105 (02)
[5]   Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology [J].
Guo, Daoyou ;
Wu, Zhenping ;
Li, Peigang ;
An, Yuehua ;
Liu, Han ;
Guo, Xuncai ;
Yan, Hui ;
Wang, Guofeng ;
Sun, Changlong ;
Li, Linghong ;
Tang, Weihua .
OPTICAL MATERIALS EXPRESS, 2014, 4 (05) :1067-1076
[6]   Preparation and gas-sensing performance of In2O3 porous nanoplatelets [J].
Guoa, Lijun ;
Shen, Xiaoping ;
Zhu, Guoxing ;
Chen, Kangmin .
SENSORS AND ACTUATORS B-CHEMICAL, 2011, 155 (02) :752-758
[7]   Electromagnetic fields around silver nanoparticles and dimers [J].
Hao, E ;
Schatz, GC .
JOURNAL OF CHEMICAL PHYSICS, 2004, 120 (01) :357-366
[8]   Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films [J].
Kumar, S. Sampath ;
Rubio, E. J. ;
Noor-A-Alam, M. ;
Martinez, G. ;
Manandhar, S. ;
Shutthanandan, V. ;
Thevuthasan, S. ;
Ramana, C. V. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (08) :4194-4200
[9]   Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN -: art. no. 211110 [J].
Mikulics, M ;
Marso, M ;
Javorka, P ;
Kordos, P ;
Lüth, H ;
Kocan, M ;
Rizzi, A ;
Wu, S ;
Sobolewski, R .
APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3
[10]   Wide-bandgap semiconductor ultraviolet photodetectors [J].
Monroy, E ;
Omnès, F ;
Calle, F .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (04) :R33-R51