Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

被引:8
作者
Inoue, Daisuke [1 ]
Hiratani, Takuo [1 ]
Fukuda, Kai [1 ]
Tomiyasu, Takahiro [1 ]
Gu, Zhichen [1 ]
Amemiya, Tomohiro [2 ]
Nishiyama, Nobuhiko [2 ]
Arai, Shigehisa [2 ]
机构
[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Inst Innovat Res, Tokyo 1528552, Japan
基金
日本学术振兴会;
关键词
Distributed-feedback laser; lateral current injection; membrane laser; optical interconnection; semiconductor laser; GBIT/S DIRECT MODULATION; BH-DFB LASERS; HETEROGENEOUS INTEGRATION; CHIP; INTERCONNECT; OPERATION; THRESHOLD; FUTURE;
D O I
10.1109/JSTQE.2017.2716184
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
On-chip optical interconnection is a promising technology for wiring future large-scale integrated circuits, as a means to mitigate the considerable power dissipation of traditional wiring layers. Here, we fabricate an integrated optical link using a membrane distributed-feedback (DFB) laser and a p-i-n photodiode (PD) in a butt-jointed built-in coupling geometry. The optical link is formed on a Si substrate by benzocyclobutene bonding. The integrated DFB laser shows a low-threshold current of 0.48 mA. Light transmission between the DFB laser and the p-i-n PD is confirmed with static measurements of the optical link. The optical link has a 3-dB bandwidth of 11.3 GHz at a 2.73 mA DFB laser bias current and a -3 V p-i-n PD bias voltage. A data transmission experiment of the optical link is performed, using a nonreturn to zero, pseudorandom-bit-sequence with a word length of 2(31)-1 signals. With a DFB laser bias current of 2.5 mA, 10 Gbit/s data transmission with a bit-error-rate of 6 x 10(-7) is successfully achieved.
引用
收藏
页数:8
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