Conducting Intrinsic Nanocrystalline Silicon Films with High Growth Rate Prepared at 27.12 MHz Frequency

Growth and characterization of intrinsic nanocrystalline silicon (nc-Si:H) thin films have been studied using 27.12 MHz H-2-diluted SiH4 plasma in PECVD, by optimizing the gas pressure during deposition. High electrical conductivity (similar to 10(-3) S cm(-1)) and narrow optical gap (1.762 eV) of the mostly crystalline (similar to 80%) network with optimum hydrogenation and dominance towards thermodynamically preferred (220) crystallographic orientation, obtained at a high growth rate (39 nm/min), signify its promising use in the fabrication of devices e. g., solar cells in particular.