Properties of self-assembled Ga-polar and N-polar GaN/AlN quantum dots

被引：3

作者：

Gogneau, N ^{[1
]}

Monroy, E ^{[1
]}

Fossard, F ^{[1
]}

Gayral, B ^{[1
]}

Monnoye, S ^{[1
]}

Mank, H ^{[1
]}

Daudin, B ^{[1
]}

机构：

[1] CEA, Equipe Mixte CEA CNRS UJF, Dept Rech Fondamentale Mat Condensee, SP2M, F-38054 Grenoble 9, France

来源：

5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS | 2004年

关键词：

D O I：

10.1002/pssc.200405011

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The control of the Ga self-surfactant effect during the growth of Ga- and N-polar GaN has made possible to synthesize GaN/AIN quantum dots both with metal- and N- polarity. We show that the GaN island density can be controlled over about one order of magnitude for both polarities. Ga- and N-polar GaN/AIN QD superlattices present intense luminescence that red shifts for increasing number of periods. This behaviour is attributed to a piezo-electric variation resulting from the evolution of the strain state in the System.

引用

页码：2504 / 2507

页数：4

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