Properties of self-assembled Ga-polar and N-polar GaN/AlN quantum dots

被引：3
|
作者：
Gogneau, N [1 ]
Monroy, E [1 ]
Fossard, F [1 ]
Gayral, B [1 ]
Monnoye, S [1 ]
Mank, H [1 ]
Daudin, B [1 ]
机构：
[1] CEA, Equipe Mixte CEA CNRS UJF, Dept Rech Fondamentale Mat Condensee, SP2M, F-38054 Grenoble 9, France
来源：
5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS | 2004年
关键词：
D O I：
10.1002/pssc.200405011
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The control of the Ga self-surfactant effect during the growth of Ga- and N-polar GaN has made possible to synthesize GaN/AIN quantum dots both with metal- and N- polarity. We show that the GaN island density can be controlled over about one order of magnitude for both polarities. Ga- and N-polar GaN/AIN QD superlattices present intense luminescence that red shifts for increasing number of periods. This behaviour is attributed to a piezo-electric variation resulting from the evolution of the strain state in the System.
引用
收藏
页码：2504 / 2507
页数：4
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