2x2 and 4x4 CMOS Switching Matrices for 0.01-12 GHz Applications

被引:0
|
作者
Shin, Donghyup [1 ]
Rebeiz, Gabriel M. [1 ]
机构
[1] Univ Calif San Diego, San Diego, CA 92103 USA
来源
2009 ANNUAL IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2009 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2009 | 2009年
关键词
CMOS switches; Switching matrix; DPDT Switch; 4x4; Switch; substrate resistance; DESIGN;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents 2x2 and 4x4 switching matrices implemented in 0.13um CMOS. The switches are based on a series-shunt design with inductive matching at the input and output ports. High substrate resistance together with deep trenches is used for low insertion loss. A 2x2 switch matrix (also called a transfer switch) results in an insertion loss and isolation of 1.3-2.3 and 48-40 dB, respectively, at 2-12 GHz. The 2x2 switch is used to build a single-chip 4x4 CMOS switch matrix with an insertion loss and isolation of 2.3-4.5 and 57-35 dB, respectively, at 2-12 GHz. The measured input P1dB and IP3 is 11-12 dBm and 29-30 dBm, respectively, both at 6 GHz and at 12 GHz. The chip area is 0.84x0.79 mm(2) (2x2) and 0.95x1.52 mm(2) (4x4), and the switch matrices does not consume any current from a 1.5 V supply.
引用
收藏
页码:113 / 117
页数:5
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