Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping

被引：10

作者：

Fet, A. ^{[1
]}

Haeublein, V. ^{[1
]}

Bauer, A. J. ^{[1
]}

Ryssel, H. ^{[1
]}

Frey, L. ^{[1
]}

机构：

[1] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

关键词：

conduction bands; doping; electronegativity; fluorine; hafnium compounds; high-k dielectric thin films; ion implantation; lanthanum; MIS structures; titanium compounds; valence bands; work function; ENERGY-LEVELS; ION-IMPLANTATION; GATE; IMPURITIES;

D O I：

10.1063/1.3303976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, an ion implantation approach to engineer the effective work function is discussed and an empirical model to explain the mechanisms of work function change is proposed. It is shown that by doping a TiN/HfSiOx stack with La and F, a silicon conduction band edge and valence band edge metal effective work function of 3.8 and 5.4 eV, respectively, can be achieved. The empirical correlation of the achieved effective work function to the electronegativity of the dopant element is explained.

引用

页数：3

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