Field Emission from Gated Planar Graphene Edges

被引：0

作者：

Shaw, Jonathan L. ^{[1
]}

Boos, J. Brad ^{[2
]}

Kong, Byoung-Don ^{[3
]}

Robinson, Jeremy T. ^{[1
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

[2] KeyW Corp, Hanover, MD USA

[3] Pohang Univ, Pohang, Gyeongsangbuk D, South Korea

来源：

2018 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC) | 2018年

关键词：

Field emission; graphene edge; vacuum transistor; energy distribution;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report electron field emission from planar graphene edge sources with integrated gate and drain electrodes, forming a field effect transistor with vacuum transport parallel to the substrate surface. The drain-source voltage required to produce a given current changes with the potential applied to the integrated gate in a manner consistent with models. The energy distribution of the field emitted beam peaks near the Fermi energy.

引用

页码：191 / 192

页数：2

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