Correlation of nitrogen related traps in InGaAsN with solar cell properties

被引：40

作者：

Khan, Aurangzeb ^{[1
]}

Kurtz, Sarah R.

Prasad, S.

Johnston, S. W.

Gou, Jihua

机构：

[1] Univ S Alabama, Dept Elect & Comp Engn, Mobile, AL 36688 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

[3] Univ S Alabama, Dept Mech Engn, Mobile, AL 36688 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期

关键词：

D O I：

10.1063/1.2747664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal annealing of nitrogen related traps in p-type InGaAsN and GaAsN is investigated by deep level transient spectroscopy (DLTS). Upon annealing, an apparent recovery of the photovoltaic properties correlates with changes in the DLTS data observed for InGaAsN and GaAsN diodes and solar cells, revealing that a nitrogen related E1 (E-C-0.20 eV) center has an important role in governing the solar cell performance. The large electron capture cross section (similar to 8.9x10(-15) cm(2)) of this center indicates that this defect may act as an efficient recombination center. Therefore, its complete removal by annealing or by some other process is essential for the high performance of GaInAsN solar cells. The internal quantum efficiency data were modeled to quantify the change in material properties associated with this improvement upon annealing. Annealed cells with indium impurity (InGaAsN) show a slightly higher photoresponse, which could be due to low scattering caused by In-N pair formation after annealing. (c) 2007 American Institute of Physics.

引用

页数：3

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