Nonadiabatic phonons within the doped graphene layers of XC6 compounds

被引:47
作者
Dean, Mark P. M. [1 ]
Howard, Christopher A. [2 ,3 ]
Saxena, Siddharth S. [1 ]
Ellerby, Mark [2 ,3 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] UCL, London Ctr Nanotechnol, London WC1E 6BT, England
[3] UCL, Dept Phys & Astron, London WC1E 6BT, England
来源
PHYSICAL REVIEW B | 2010年 / 81卷 / 04期
基金
英国工程与自然科学研究理事会;
关键词
BORN-OPPENHEIMER APPROXIMATION; RAMAN-SCATTERING; INTERCALATION COMPOUNDS; CARBON NANOTUBES; GRAPHITE; SUPERCONDUCTIVITY; RENORMALIZATION; SPECTROSCOPY; BREAKDOWN; DISORDER;
D O I
10.1103/PhysRevB.81.045405
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report Raman-scattering measurements of BaC6, SrC6, YbC6, and CaC6, which permit a systematic study of the phonons and the electron-phonon interaction within the doped graphene layers of these compounds. The out-of-plane carbon phonon softens as the spacing of the graphene layers is reduced in the series BaC6, SrC6, YbC6, and CaC6. This is due to increasing charge in the pi* electronic band. Electron-phonon interaction effects between the in-plane carbon modes at approximate to 1500 cm(-1) and the pi* electrons cause a strong nonadiabatic renormalization. As charge is transferred into the pi* band, these nonadiabatic effects are found to increase concurrent with a reduction in the phonon lifetime.
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页数:5
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