2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off

被引：49

作者：

Zhao, Yongzhou ^{[1
,2
]}

Liang, Jingqiu ^{[1
]}

Zeng, Qinghui ^{[3
]}

Li, Yang ^{[1
,2
]}

Li, Panyuan ^{[1
,2
]}

Fan, Kaili ^{[1
,2
]}

Sun, Wenchao ^{[1
,2
]}

Lv, Jinguang ^{[1
]}

Qin, Yuxin ^{[1
]}

Wang, Qiang ^{[1
]}

Tao, Jin ^{[1
]}

Wang, Weibiao ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Appl Opt, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Jilin, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, State Key Lab Luminescence & Applicat, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Jilin, Peoples R China

来源：

OPTICS EXPRESS | 2021年 / 29卷 / 13期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; HIGH-POWER; PERFORMANCE; EXTRACTION; EMISSION; DESIGN; OUTPUT;

D O I：

10.1364/OE.428482

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this article, 2000 PPI red silicon-based AlGaInP micro-LED arrays were fabricated and investigated. The AlGaInP epilayer was transferred onto the silicon substrate via the In-Ag bonding technique and an epilayer lift-off process. The silicon substrate with a high thermal conductivity could provide satisfactory heat dissipation, leading to micro-LED arrays that had a stable emission spectrum with increasing current density from 20 to 420 A/cm(2) along with a red-shift of the peak position from 624.69 to 627.12 nm (Delta lambda = 2.43 nm). Additionally, increasing the injection current density had little effect on the CIE (x, y) of the micro-LED arrays. Further, the I-V characteristics and light output power of micro-LED arrays with different pixel sizes demonstrated that the AlGaInP red micro-LED array on a silicon substrate had excellent electrical stability and optical output. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：20217 / 20228

页数：12

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