Effect of low-dose ion implantation on the stress of low-pressure chemical vapor deposited silicon nitride films

被引：5

作者：

Yamamoto, I ^{[1
]}

Kasai, N ^{[1
]}

Nishimoto, S ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Labs, Kanagawa, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

silicon nitride; tensile stress; ion implantation; LOGOS;

D O I：

10.1143/JJAP.37.1256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effect of reducing stress in low-pressure chemical vapor deposited (LPCVD)-Si3N4 films by a low-dose ion implantation of P, Ar and As. The tensile stress of the Si3N4 films was eliminated by implanting these ions in the middle of the films in doses as low as 3 x 10(13) to 1.2 x 10(14) cm(-2). After annealing, although the stress of the implanted nitride films recovers partially, its value still does not reach that of the unimplanted films. The influence of implantation on the local oxidation of silicon (LOCOS) profile and the device characteristics is negligible.

引用

页码：1256 / 1259

页数：4

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