Non-invasive and non-destructive characterization of MBE-grown CdZnTe/CdTe superlattice-based dislocation filtering layers

被引：9

作者：

Pan, Wenwu ^{[1
,2
]}

Nath, Shimul Kanti ^{[1
,2
,3
]}

Ma, Shuo ^{[1
,2
]}

Gu, Renjie ^{[1
,2
]}

Zhang, Zekai ^{[1
,2
]}

Fu, Lan ^{[3
]}

Faraone, Lorenzo ^{[1
,2
]}

Lei, Wen ^{[1
,2
]}

机构：

[1] Univ Western Australia, Dept Elect Elect & Comp Engn, 35 Stirling Highway, Perth, WA 6009, Australia

[2] Univ Western Australia, ARC Ctr Excellence Transformat Meta Opt Syst TMOS, Dept Elect Elect & Comp Engn, Perth, WA 6009, Australia

[3] Australian Natl Univ, Res Sch Phys, Dept Elect Mat Engn, Canberra, ACT 2601, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 2022年 / 131卷 / 20期

基金：

澳大利亚研究理事会;

关键词：

MOLECULAR-BEAM EPITAXY; CADMIUM-TELLURIDE; HGCDTE; REDUCTION; CDTE;

D O I：

10.1063/5.0091573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the structural and optical properties of heteroepitaxial II-VI CdTe (211)B buffer layers with strained CdZnTe/CdTe superlattice layers, investigated by employing non-destructive methods including high-resolution x-ray diffraction, cathodoluminescence, and photoluminescence spectroscopy. X-ray diffraction reciprocal space mapping measurements revealed that the superlattice layers are coherently strained, leading to a spread in x-ray double-crystal rocking curve full-width at half-maximum values but better in-plane lattice-matching with HgCdTe. Both cross-sectional cathodoluminescence and photoluminescence measurements confirm the coherent growth of superlattice layers and their dislocation filtering effects. Both these techniques in CdTe layers are found to be well correlated with the dislocation density as determined by etch pit density measurements. The results indicate the potential of these non-destructive methods to be further developed into general-purpose techniques capable of characterizing the defect evolution in semiconductor heteroepitaxy. Published under an exclusive license by AIP Publishing.

引用

页数：9

共 36 条

[1] Reduction of the dislocation density in molecular beam epitaxial CdTe(211)B on Ge(211) [J].