CuCr1-xNixO2 thin films prepared by chemical solution deposition

被引：7

作者：

Lin, Yi-Han ^{[1
]}

Yu, Bing-Shen ^{[1
]}

Lei, Chien-Ming ^{[2
,3
]}

Fu, Yongsheng ^{[4
]}

Park, Joon-Hyeong ^{[5
]}

Chiu, Te-Wei ^{[1
]}

机构：

[1] Natl Taipei Univ Technol, Dept Mat & Mineral Resources Engn, 1 Zhongxiao E Rd Sec 3, Taipei 106, Taiwan

[2] Chinese Culture Univ, Dept Chem & Mat Engn, Taipei 11114, Taiwan

[3] Chinese Culture Univ, Grad Inst Nanomat, Taipei 11114, Taiwan

[4] Nanjing Univ Sci & Technol, Minist Educ, Key Lab Soft Chem & Funct Mat, Nanjing 210094, Jiangsu, Peoples R China

[5] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

THIN SOLID FILMS | 2018年 / 660卷

关键词：

Delafossite compound; p-type semiconductors; CuCrO2; Chemical solution deposition; Transparent conducting oxides; ELECTRICAL-PROPERTIES; CUCRO2; PERFORMANCE; PROPERTY;

D O I：

10.1016/j.tsf.2018.04.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuCr1-xNixO2, (0.0 <= x <= 0.4) thin films were prepared on non-alkali glass substrates by chemical solution deposition. The effects of Ni content in CuCr1-xNixO2 thin films on the microstructural, optical, electrical, and magnetic properties were investigated. X-ray diffraction analysis revealed that all the samples presented the delafossite structure. The transmittance of the CuCr1-xNixO2 thin films was above 60% in the visible region, and the band gap was between 3.02 and 3.17 eV. It was found that the electrical resistance was decreased by increasing doping amount of Ni2+ ions. The lowest resistivity with relatively high carrier concentration was obtained in CuCr0.6Ni0.4O2 thin films. The experimental results imply that it is possible to get higher electrical conductivity of p-type transparent conducting oxides from CuCrO2 via doping with divalent ions.

引用

页码：705 / 710

页数：6

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