High-resolution electron beam lithography with Langmuir-Blodgett films

被引：0
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作者：
Kim, CN
Kang, DW
Kim, ER
Lee, HW
机构：
来源：
MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 1997年 / 294卷
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暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Novel positive resists of poly(methylphenyl methacrylate) and poly(methylphenyl methacylate)-co-(methyl methacrylate) were synthesized and their performance as electron beam resists was evaluated, initially with spin-cast films and then with Langmuir-Blodgett(LB) films on silicon substrate, for optimum sensitivity and resolution. The fine patterns were formed at the dose range of 250-350 mu C/cm(2), and developed in the solution made of various ratio of MIBK/IPA mixture. The best resolution was 80 nm for the PMPMA resist and 0.14 mu m for the P(MPMA-MMA) resist.
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页码：479 / 482
页数：4
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