Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk/SOI CMOS process

被引：9

作者：

Moloney, AM ^{[1
]}

Morrison, AP

Jackson, JC

Mathewson, A

Alderman, J

Donnelly, J

O'Neill, B

Kelleher, AM

Healy, G

Murphy, PJ

机构：

[1] Natl Univ Ireland Univ Coll Cork, Dept Elect & Elect Engn, Cork, Ireland

[2] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 04期

关键词：

D O I：

10.1049/el:20030187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel monolithically integrated silicon-on-insulator (SOI) CMOS avalanche photodiode photoreceiver is presented. The photoreceiver consists of a high gain (>30), low voltage (<20 V) Geiger-mode avalanche photodiode, operated below breakdown in avalanche mode, monolithically integrated with a transimpedance amplifier (TZ) in a 1.5 mum hybrid bulk/SOI CMOS process.

引用

页码：391 / 392

页数：2

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