Deposition and properties of B-N codoped p-type ZnO thin films by RF magnetron sputtering

被引：14

作者：

Sui, Y. R. ^{[1
,2
]}

Yao, B. ^{[1
,3
]}

Yang, J. H. ^{[2
]}

Cui, H. F. ^{[1
]}

Huang, X. M. ^{[1
]}

Yang, T. ^{[1
]}

Gao, L. L. ^{[1
]}

Deng, R. ^{[1
]}

Shen, D. Z. ^{[3
]}

机构：

[1] Jilin Univ, Dept Phys, Changchun 130023, Peoples R China

[2] Jilin Normal Univ, Dept Phys, Siping 136000, Peoples R China

[3] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Zinc oxide; B-N codoping; p-Type conduction; Sputtering; Properties; DOPED ZNO; LUMINESCENCE; EXCITON; STATES;

D O I：

10.1016/j.apsusc.2009.11.017

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

B-N codoped p-type ZnO thin films have been realized by radio frequency (rf) magnetron sputtering using a mixture of argon and oxygen as sputtering gas. Types of conduction and electrical properties in codoped ZnO films were found to be dependent on oxygen partial pressure ratios in the sputtering gas mixture. When oxygen partial pressure ratio was 70%, the codoped ZnO film showed p-type conduction and had the best electrical properties. Additionally, the p-ZnO/n-Si heterojunction showed a clear p-n diode characteristic. XRD results indicate that the B-N codoped ZnO film prepared in 70% oxygen partial pressure ratio has high crystal quality with (0 0 2) preferential orientation. Meanwhile, the B-N codoped ZnO film has high optical quality and displays the stronger near band edge (NBE) emission in the temperature-dependent photoluminescence spectrum, the acceptor energy level was estimated to be located at 125 meV above the valence band. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：2726 / 2730

页数：5

共 39 条

[1] High temperature excitonic stimulated emission from ZnO epitaxial layers [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040

[2] On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide -: art. no. 112112 [J].

Barnes, TM ;

Olson, K ;

Wolden, CA .

APPLIED PHYSICS LETTERS, 2005, 86 (11) :1-3

[3] Nano-star formation in Al-doped ZnO thin film deposited by dip-dry method and its characterization using atomic force microscopy, electron probe microscopy, photo luminescence and laser Raman spectroscopy [J].

Behera, D. ;

Acharya, B. S. .

JOURNAL OF LUMINESCENCE, 2008, 128 (10) :1577-1586

[4] Raman study of oriented ZnO thin films deposited by sol-gel method [J].

Ben Yahia, S. ;

Znaidi, L. ;

Kanaev, A. ;

Petitet, J. P. .

SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2008, 71 (04) :1234-1238

[5] Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis [J].

Bian, JM ;

Li, XM ;

Gao, XD ;

Yu, WD ;

Chen, LD .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :541-543

[6] p-type behavior in In-N codoped ZnO thin films -: art. no. 252106 [J].

Chen, LL ;

Lu, JG ;

Ye, ZZ ;

Lin, YM ;

Zhao, BH ;

Ye, YM ;

Li, JS ;

Zhu, LP .

APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3

[7] ACCEPTOR-EXCITON COMPLEXES IN ZNO - A COMPREHENSIVE ANALYSIS OF THEIR ELECTRONIC STATES BY HIGH-RESOLUTION MAGNETO-OPTICS AND EXCITATION SPECTROSCOPY [J].

GUTOWSKI, J ;

PRESSER, N ;

BROSER, I .

PHYSICAL REVIEW B, 1988, 38 (14) :9746-9758

[8] Raman spectroscopy study of ZnO-based ceramic films fabricated by novel sol-gel process [J].

Huang, YQ ;

Liu, MD ;

Li, Z ;

Zeng, YK ;

Liu, SB .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 97 (02) :111-116

[9] p-type electrical conduction in ZnO thin films by Ga and N codoping [J].

Joseph, M ;

Tabata, H ;

Kawai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11A) :L1205-L1207

[10] LUMINESCENCE OF ZNO UNDER HIGH ONE-QUANTUM AND 2-QUANTUM EXCITATION [J].

KLINGSHIRN, C .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02) :547-556

← 1 2 3 4 →