Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors

被引：35

作者：

Meyer, David J. ^{[1
]}

Feygelson, Tatyana I. ^{[1
]}

Anderson, Travis J. ^{[1
]}

Roussos, Jason A. ^{[1
]}

Tadjer, Marko J. ^{[1
,2
]}

Downey, Brian P. ^{[1
]}

Katzer, D. Scott ^{[1
]}

Pate, Bradford B. ^{[1
]}

Ancona, Mario G. ^{[1
]}

Koehler, Andrew D. ^{[1
]}

Hobart, Karl D. ^{[1
]}

Eddy, Charles R., Jr. ^{[1
]}

机构：

[1] US Naval Res Lab, Washington, DC 20375 USA

[2] Amer Soc Engn Educ, Washington, DC 20375 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 10期

关键词：

NCD; load-pull; amplifier; reliability; HEMTS;

D O I：

10.1109/LED.2014.2345631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this split-wafer study, we have compared the dc, pulsed, small and large signal RF electrical performance of nanocrystalline diamond (NCD) coated AlGaN/GaN high electron mobility transistors (HEMTs) to reference devices with silicon nitride passivation only. The NCD-coated HEMTs were observed to outperform reference devices in transconductance, large-signal gain, output power density, and power-added efficiency at 4 GHz. The measured improvements were suspected to be related to reduced dispersion and lower source access resistance afforded by the NCD film.

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收藏

页码：1013 / 1015

页数：3

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