In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

被引：34

作者：

Richard, M. -I. ^{[1
,2
]}

Highland, M. J. ^{[1
,3
]}

Fister, T. T. ^{[1
]}

Munkholm, A. ^{[4
]}

Mei, J. ^{[4
]}

Streiffer, S. K.

Thompson, Carol ^{[5
]}

Fuoss, P. H. ^{[1
]}

Stephenson, G. B. ^{[1
,3
]}

机构：

[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[2] Univ Paul Cezanne Aix Marseille, IM2NP, Fac Sci St Jerome, F-13397 Marseille, France

[3] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

[4] Philips Lumileds Lighting Co, San Jose, CA 95131 USA

[5] No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

关键词：

gallium compounds; III-V semiconductors; indium compounds; MOCVD; semiconductor growth; stress relaxation; wide band gap semiconductors; X-ray diffraction; LOCALIZED EXCITONS; ELASTIC PROPERTIES; THERMAL-EXPANSION; LIGHT-EMISSION; QUANTUM-WELLS; LAYERS; EPILAYERS; GAN;

D O I：

10.1063/1.3293441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of In(x)Ga(1-x)N on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.

引用

页数：3

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