Plasticity of indium antimonide between-176 and 400 °C under pressure. Part I: Macroscopic aspects of the deformation

被引:15
作者
Kedjar, B. [1 ]
Thilly, L. [1 ]
Demenet, J. -L. [1 ]
Rabier, J. [1 ]
机构
[1] Univ Poitiers, PHYMAT, SP2MI, UMR CNRS 6630, F-86962 Futuroscope, France
关键词
Semiconductor; Indium antimonide; Brittle-to-ductile transition; Compression; Indentation; MECHANICAL-PROPERTIES; PHASE; HARDNESS; SILICON; STRESS; GAAS;
D O I
10.1016/j.actamat.2009.10.050
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Indium antimonide (InSb) single crystals have been plastically deformed between -176 and 400 degrees C, i.e. below and above the brittle-to-ductile transition temperature situated around 150-160 degrees C, via the use of microindentation below room temperature (RT) and the Paterson press (compression under gaseous pressure) above RT. The evolution of the macroscopic mechanical data (hardness and critical resolved shear stress) with temperature suggests the existence of three deformation regimes with transitions at T-tr1 = 150 degrees C and T-tr2 (=) 20 degrees C. T-tr1 coincides with the brittle-to-ductile temperature, while T-tr2 may coincide with a transition in the nature of dislocations with dislocations propagating in the glide set above T-tr2 while moving in the shuffle set below Ttr(2). (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:1418 / 1425
页数:8
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