Deep level defects in n-type GaAsBi and GaAs grown at low temperatures (vol 113, 133708, 2013)

被引：4
|
作者：
Mooney, P. M. [1 ]
Watkins, K. P. [1 ]
Jiang, Zenan [1 ]
Basile, A. F. [1 ]
Lewis, R. B. [2 ]
Bahrami-Yekta, V. [2 ]
Masnadi-Shirazi, M. [2 ]
Beaton, D. A. [2 ]
Tiedje, T. [2 ]
机构：
[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
[2] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8P 5C2, Canada
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 01期
关键词：
D O I：
10.1063/1.4905390
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页数：1
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