Deep level defects in n-type GaAsBi and GaAs grown at low temperatures (vol 113, 133708, 2013)

被引：4
|
作者：
Mooney, P. M. [1 ]
Watkins, K. P. [1 ]
Jiang, Zenan [1 ]
Basile, A. F. [1 ]
Lewis, R. B. [2 ]
Bahrami-Yekta, V. [2 ]
Masnadi-Shirazi, M. [2 ]
Beaton, D. A. [2 ]
Tiedje, T. [2 ]
机构：
[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
[2] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8P 5C2, Canada
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 01期
关键词：
D O I：
10.1063/1.4905390
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页数：1
相关论文
共 50 条
  • [21] DEEP LEVEL AND LUMINESCENCE PROPERTIES OF Er-IMPLANTED n-TYPE GaAs
    Ito, Keisuke
    Goto, Takefumi
    Uekusa, Shin-ichiro
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 28, 2010, 28 : 29 - 34
  • [22] n-Channel conductance spectroscopy of deep defects in low temperature grown GaAs
    Steen, C
    Kiesel, P
    Tautz, S
    Krämer, S
    Soubatch, S
    Malzer, S
    Döhler, GH
    PHYSICA B-CONDENSED MATTER, 2001, 308 (308-310) : 1177 - 1180
  • [23] INVESTIGATION OF SURFACE PROPERTIES OF EPITAXIAL N-TYPE GAAS FILMS AT LOW-TEMPERATURES
    SYTENKO, TN
    LYASHENK.VI
    TYAGULSK.IP
    SHAPOVAL, VY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 258 - 261
  • [24] INVESTIGATION OF THE SURFACE PROPERTIES OF EPITAXIAL n-TYPE GaAs FILMS AT LOW TEMPERATURES.
    Sytenko, T.N.
    Lyashenko, V.I.
    Tyagul'skii, I.P.
    Shapoval, V.Ya.
    1973, 7 (02): : 258 - 261
  • [25] Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy
    Krispin, P
    Spruytte, SG
    Harris, JS
    Ploog, KH
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6294 - 6301
  • [26] Properties of metastable hydrogen-related defects in n-type GaAs studied by isothermal deep-level transient spectroscopy
    Tokuda, Y
    Kamiya, K
    Okumura, T
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) : 1943 - 1947
  • [27] PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV
    ARIKAN, MC
    HATCH, CB
    RIDLEY, BK
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (04): : 635 - 650
  • [28] DEEP-LEVEL ANALYSIS OF N-TYPE GAAS1-XPX ALLOYS
    BENSALEM, MM
    ZAIDI, MA
    MAAREF, H
    BOURGOIN, JC
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) : 1004 - 1007
  • [29] Effect of epitaxial layer thickness on the deep level defects in MBE grown n-type Al0.33Ga0.67As
    Mari, Riaz H.
    Aziz, M.
    Shafi, M.
    Khatab, A.
    Taylor, D.
    Henini, M.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1643 - 1646
  • [30] Investigation on deep level defects in rapid thermal annealed undoped n-type InP
    Janardhanam, V.
    Kumar, A. Ashok
    Reddy, V. Rajagopal
    Reddy, P. Narasimha
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2010, 21 (03) : 285 - 290
12345